skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Carrier-Density-Dependent Lattice Stability in InSb

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930499
Report Number(s):
BNL-80434-2008-JA
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98
Country of Publication:
United States
Language:
English
Subject:
national synchrotron light source

Citation Formats

Hillyard,P., Gaffney, K., Lindenberg, A., Engemann, S., Akre, R., Arthur, J., Blome, C., Bucksbaum, P., Cavalieri, A., and et al.. Carrier-Density-Dependent Lattice Stability in InSb. United States: N. p., 2007. Web. doi:10.1103/PhysRevLett.98.125501.
Hillyard,P., Gaffney, K., Lindenberg, A., Engemann, S., Akre, R., Arthur, J., Blome, C., Bucksbaum, P., Cavalieri, A., & et al.. Carrier-Density-Dependent Lattice Stability in InSb. United States. doi:10.1103/PhysRevLett.98.125501.
Hillyard,P., Gaffney, K., Lindenberg, A., Engemann, S., Akre, R., Arthur, J., Blome, C., Bucksbaum, P., Cavalieri, A., and et al.. Mon . "Carrier-Density-Dependent Lattice Stability in InSb". United States. doi:10.1103/PhysRevLett.98.125501.
@article{osti_930499,
title = {Carrier-Density-Dependent Lattice Stability in InSb},
author = {Hillyard,P. and Gaffney, K. and Lindenberg, A. and Engemann, S. and Akre, R. and Arthur, J. and Blome, C. and Bucksbaum, P. and Cavalieri, A. and et al.},
abstractNote = {},
doi = {10.1103/PhysRevLett.98.125501},
journal = {Physical Review Letters},
number = ,
volume = 98,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • No abstract prepared.
  • No abstract prepared.
  • Single-crystal natural diamonds have been intrinsically photoexcited using 2 ps laser pulses. Electron and hole mobilities and decay times are examined as a function of induced carrier density. Two major density dependent effects are observed. First, at high induced carrier densities, a dramatic decrease in the carrier mobility is observed. This is attributed to carrier-carrier scattering between the electrons and the holes. A model describing carrier-carrier scattering in silicon and germanium has been scaled to diamond. Second, the decay time of the electrons decreases as the initially photoexcited density increases. A simple one-level recombination model successfully explains this density dependence.more » The combination of these two effects results in a minimum in the measured photoconductive decay times.« less
  • We investigate the surface electronic structure and thermodynamic stability of the SrTiO3 (111) slabs using density functional theory. We observe that, for Ti-terminated slabs it is indeed possible to create a two-dimensional electron gas (2DEG). However, the carrier density of the 2DEG displays a strong thickness dependence due to the competition between electronic reconstruction and polar distortions. As expected, having a surface oxygen atom at the Ti termination can stabilize the system, eliminating any electronic reconstruction, thereby making the system insulating. An analysis of the surface thermodynamic stability suggests that the Ti terminated (111) surface should be experimentally realizable. Thismore » surface may be useful for exploring the behavior of electrons in oxide (111) interfaces and may have implications for modern device applications.« less