Strain Relaxation of GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
Journal Article
·
· Materials Science Forum
No abstract prepared.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 929846
- Report Number(s):
- BNL--80410-2008-JA
- Journal Information:
- Materials Science Forum, Journal Name: Materials Science Forum Vol. 527-529; ISSN MSFOEP; ISSN 0255-5476
- Country of Publication:
- United States
- Language:
- English
Similar Records
DOMAIN STRUCTURES IN 6H-SIC WAFERS AND THEIR EFFECT ON THE MICROSTRUCTURES OF GAN FILMS GROWN ON ALN AND AL0.2GAN0.8N BUFFERS LAYERS
Structural Characterization of Bulk AlN Crystals Grown from Self-Seeding and Seeding by SiC Substrates
EXPITAXIAL TILTING OF GAN GROWN ON VICINAL SURFACES OF SAPPHIRE
Journal Article
·
Tue Dec 31 23:00:00 EST 2002
· Journal of Crystal Growth
·
OSTI ID:15008346
Structural Characterization of Bulk AlN Crystals Grown from Self-Seeding and Seeding by SiC Substrates
Journal Article
·
Sat Dec 31 23:00:00 EST 2005
· Materials Science Forum
·
OSTI ID:929844
EXPITAXIAL TILTING OF GAN GROWN ON VICINAL SURFACES OF SAPPHIRE
Journal Article
·
Fri Dec 31 23:00:00 EST 2004
· ULTRASON. SONOCHEM.
·
OSTI ID:884125