Investigation of the Effect of I-ZnO Window Layer on the Device Performance of the Cd-Free CIGS Based Solar Cells: Preprint
This paper focuses on preparing Cd-free, CIGS-based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 929628
- Report Number(s):
- NREL/CP-520-42573
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
36 MATERIALS SCIENCE
AMMONIUM HYDROXIDES
CHEMICAL VAPOR DEPOSITION
CIGS
DEPOSITION
DEVICE PERFORMANCE
METALLORGANIC CHEMICAL VAPOR DEPOSITION
PERFORMANCE
PV
RF MAGNETRON SPUTTERING
SOLAR CELLS
SUBSTRATES
Silicon Materials and Devices
Solar Energy - Photovoltaics
THICKNESS
WINDOWS
X-RAY PHOTOELECTRON SPECTROSCOPY
36 MATERIALS SCIENCE
AMMONIUM HYDROXIDES
CHEMICAL VAPOR DEPOSITION
CIGS
DEPOSITION
DEVICE PERFORMANCE
METALLORGANIC CHEMICAL VAPOR DEPOSITION
PERFORMANCE
PV
RF MAGNETRON SPUTTERING
SOLAR CELLS
SUBSTRATES
Silicon Materials and Devices
Solar Energy - Photovoltaics
THICKNESS
WINDOWS
X-RAY PHOTOELECTRON SPECTROSCOPY