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Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.

Journal Article · · Proposed for publication in Applied Physics Letters.
OSTI ID:924229
 [1];  [2];  [2];  [1];  [1]; ;  [1];
  1. University of Florida, Gainesville, FL
  2. Sterling Semiconductor, Tampa, FL
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Abstract Not Provided

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
924229
Report Number(s):
SAND2003-1942J
Journal Information:
Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters.
Country of Publication:
United States
Language:
English

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