Ga vacancies and grain boundaries in GaN.
Journal Article
·
· Proposed for publication in Applied Physics Letters, Vol. 82, No. 7.
OSTI ID:923539
- Naval Research Laboratory, Washington, DC
- Helsinki University of Technology, Helsinki, Finland
- US Army Research Laboratory, Adelphi, MD
No abstract prepared.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 923539
- Report Number(s):
- SAND2003-1416J
- Journal Information:
- Proposed for publication in Applied Physics Letters, Vol. 82, No. 7., Journal Name: Proposed for publication in Applied Physics Letters, Vol. 82, No. 7.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Intrinsic Nanocrystalline Grain-Boundary And Oxygen Atom Vacancy Defects in Zro (2) And Hfo (2)
Grain Boundary Recombination in Cu(In,Ga)Se2 Solar Cells
Critical currents across grain boundaries in YBCO : the role of grain boundary structure.
Journal Article
·
Wed Aug 08 00:00:00 EDT 2007
· Radiat.Phys.Chem.75:2097,2006
·
OSTI ID:912600
Grain Boundary Recombination in Cu(In,Ga)Se2 Solar Cells
Journal Article
·
Fri Dec 31 23:00:00 EST 2004
· Journal of Applied Physics
·
OSTI ID:884991
Critical currents across grain boundaries in YBCO : the role of grain boundary structure.
Journal Article
·
Sun Aug 15 00:00:00 EDT 1999
· Prog. Supercond.
·
OSTI ID:942800