Mechanical behavior of gallium nitride nanotubes under combined tension-torsion: An atomistic simulation
Journal Article
·
· Journal of Applied Physics, 103(1):013505, (3 pages)
The tensile mechanical behavior of single crystalline gallium nitride (GaN) nanotubes under combined tension-torsion is investigated using molecular dynamics simulations with an empirical potential. The simulation results show that a small torsion rate (<0.010° ps-1) does not affect the tensile behavior of GaN nanotube, i.e. the nanotubes show brittle properties at low temperatures; whereas at high temperatures, they behave as ductile materials. However, the failure stress decreases with increasing rate of torsion above 0.010° ps-1, and the nanotube fails in a different manner. The torsion rate has no effect on the elastic properties of GaN nanotubes.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 922161
- Report Number(s):
- PNNL-SA-58365; JAPIAU; KC0201020; TRN: US200803%%198
- Journal Information:
- Journal of Applied Physics, 103(1):013505, (3 pages), Vol. 103, Issue 1; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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