Synthesis and Characterization of Compositionally Graded Si1-xGex Layers on Si substrate
Thin film of silicon germanium (Si1-xGex) with tailored composition was grown on Si (100) substrate at 650oC in an ultrahigh vacuum molecular beam epitaxy system. The nominal x-value is ranged from 0 to 0.14. The quality of the film was investigated by Rutherford backscattering spectrometry (RBS) in random and channeling geometries, glancing angle x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy (EDX), and atomic force microscopy (AFM). RBS/Channeling measurements indicate that the strain associated with lattice mismatch is compressive in the film. Both RBS and EDX analyses indicate the compositional graded incorporation of Ge in the film with x ranging from 0 to 0.14. The film shows island growth with each island centering around an interface dislocation.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 921256
- Report Number(s):
- PNNL-SA-52048; 19815; KP1504020
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 261(1-2):723-726, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 261(1-2):723-726 Journal Issue: 1-2 Vol. 261
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ATOMIC FORCE MICROSCOPY
CHANNELING
Channeling
Environmental Molecular Sciences Laboratory
GERMANIUM
MOLECULAR BEAM EPITAXY
RESOLUTION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
Rutherford backscattering spectrometry
SILICON
STRAINS
SUBSTRATES
SYNTHESIS
Si1-xGex thin films
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTROSCOPY
molecular beam epitaxy