Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

Technical Report · Thu Nov 01 00:00:00 EDT 2007

DOI:https://doi.org/10.2172/920928· OSTI ID:920928

Rohatgi, A

This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 920928
• Report Number(s): NREL/SR-520-42324; AAT-2-31605-02; TRN: US200803%%128
• Resource Relation: Related Information: Work performed by Georgia Institute of Technology, Atlanta, Georgia
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
DEFECTS
FABRICATION
PASSIVATION
PERFORMANCE
SILICON SOLAR CELLS
SIMULATION
SOLAR CELLS
SUBSTRATES
PV
SILICON
RESEARCH AND DEVELOPMENT
CRYSTALLINE
HIGH EFFICIENCY
LOW COST
CHARACTERIZATION
DEVICE MODELING
DEFECT PASSIVATION
LIGHT-INDUCED DEGRADATION
AG CONTACTS
Solar Energy - Photovoltaics