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Growth and characterization of transparent Pb(Zi, Ti)O{sub 3} capacitor on glass substrate.

Journal Article · · J. Appl. Phys.
DOI:https://doi.org/10.1063/1.2785027· OSTI ID:920560
(Pb)(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) films were fabricated on LaNiO{sub 3} (LNO)/In{sub 2}O{sub 3} 90%SnO{sub 2}10% (ITO) layered transparent electrodes on glass substrates using chemical solution deposition. The structural, electrical, and optical properties of semitransparent Pd/PZT/LNO/ITO and transparent ITO/LNO/PZT/LNO/ITO capacitors fabricated on glass substrates were studied. X-ray diffraction revealed an improved crystalline structure of PZT on ITO-buffered glass substrates by interposing a LNO layer between PZT and ITO. Atomic force microscopy showed a smoother surface topography for the LNO/ITO layered electrode on glass, as compared to that of the single ITO layer on glass. The remnant polarization (P{sub r}) of the Pd/PZT/LNO/ITO/glass capacitors and transparent ITO/LNO/PZT/LNO/ITO/glass capacitors was estimated from P-E hysteresis loops. The Pd/PZT/LNO/ITO capacitors on glass revealed significant improvement in the P{sub r} as compared to PZT film based capacitors with ITO electrodes only. Excellent optical transmittance was observed for the whole capacitor structure. The importance of a high performance transparent capacitor is that this structure may enable high efficiency transparent electronic devices such as solar energy storage, photovoltaic, and intelligent windows, among others.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
SC
DOE Contract Number:
AC02-06CH11357
OSTI ID:
920560
Report Number(s):
ANL/CNM/JA-58960
Journal Information:
J. Appl. Phys., Journal Name: J. Appl. Phys. Journal Issue: Oct. 15, 2007 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
ENGLISH