Identifying semiconductors by d.c. ionization conductivity
We describe a method for identifying semiconductor radiationdetector materials based on the mobility of internally generatedelectrons and holes. It was designed for the early stages of exploration,when samples are not available as single crystals, but as crystallinepowders. Samples are confined under pressure in an electric field and theincrease in current resulting from exposure to a high-intensity source of60Co gamma rays (i.e. the ionization current) is measured. We find thatfor known semiconductors the d.c. ionization current depends on voltageaccording to the Hecht equation, and for known insulators the d.c.ionization current is below our detection limits. This shows that themethod can identify semiconductors in spite of significant carriertrapping. Using this method, we have determined that BiOI, PbIF,BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 aresemiconductors.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science; National Institutes ofHealth
- DOE Contract Number:
- DE-AC02-05CH11231; NIHEB00399
- OSTI ID:
- 920344
- Report Number(s):
- LBNL-60796; R&D Project: 445001; BnR: KP1401030; TRN: US0805682
- Journal Information:
- IEEE Transactions Nuclear Science, Vol. 2, Issue 23-29; Related Information: Journal Publication Date: 10/2005
- Country of Publication:
- United States
- Language:
- English
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