Temperature hydrostatic pressure effects on the band gap ofsemiconducting carbon nanotubes
Conference
·
OSTI ID:919747
We describe the temperature and pressure dependences of theband gap of semiconducting single-wall carbon nanotubes (SWNTs). At lowpressures and temperatures, the band gaps display an unusual behavior,showing either positive or negative pressure and temperature shiftsdepending on the value of (n,m), with a distinct "family" (same n-m)behavior. We find that both pressure and temperature family behaviorshave the same qualitative origin, unveiling an interesting andunsuspected connection between static and dynamical electron-latticecouplings.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director. Office of Science. Basic EnergySciences
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 919747
- Report Number(s):
- LBNL--59696; BnR: KC0301020
- Country of Publication:
- United States
- Language:
- English
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