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Title: Fully Depleted Charge-Coupled Devices

Abstract

We have developed fully depleted, back-illuminated CCDs thatbuild upon earlier research and development efforts directed towardstechnology development of silicon-strip detectors used inhigh-energy-physics experiments. The CCDs are fabricated on the same typeof high-resistivity, float-zone-refined silicon that is used for stripdetectors. The use of high-resistivity substrates allows for thickdepletion regions, on the order of 200-300 um, with corresponding highdetection efficiency for near-infrared andsoft x-ray photons. We comparethe fully depleted CCD to thep-i-n diode upon which it is based, anddescribe the use of fully depleted CCDs in astronomical and x-ray imagingapplications.

Authors:
Publication Date:
Research Org.:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org.:
USDOE Director. Office of Science. High EnergyPhysics
OSTI Identifier:
919255
Report Number(s):
LBNL-61468
R&D Project: PS5MSL; BnR: KA1503020; TRN: US0806333
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: International Symposium on Detector Developmentfor Particle, Astrophysics, and Synchrotron Radiation Experiments(SNIC06), Stanford Linear Accelerator Center, April 3-6,2006
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ASTROPHYSICS; CHARGE-COUPLED DEVICES; DETECTION; EFFICIENCY; HIGH ENERGY PHYSICS; PHOTONS; SILICON; SUBSTRATES; SYNCHROTRON RADIATION; charge-coupled device fully depleted back illuminated highresistivity silicon pin diode

Citation Formats

Holland, Stephen E. Fully Depleted Charge-Coupled Devices. United States: N. p., 2006. Web.
Holland, Stephen E. Fully Depleted Charge-Coupled Devices. United States.
Holland, Stephen E. Mon . "Fully Depleted Charge-Coupled Devices". United States. https://www.osti.gov/servlets/purl/919255.
@article{osti_919255,
title = {Fully Depleted Charge-Coupled Devices},
author = {Holland, Stephen E.},
abstractNote = {We have developed fully depleted, back-illuminated CCDs thatbuild upon earlier research and development efforts directed towardstechnology development of silicon-strip detectors used inhigh-energy-physics experiments. The CCDs are fabricated on the same typeof high-resistivity, float-zone-refined silicon that is used for stripdetectors. The use of high-resistivity substrates allows for thickdepletion regions, on the order of 200-300 um, with corresponding highdetection efficiency for near-infrared andsoft x-ray photons. We comparethe fully depleted CCD to thep-i-n diode upon which it is based, anddescribe the use of fully depleted CCDs in astronomical and x-ray imagingapplications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {5}
}

Conference:
Other availability
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