Fully Depleted Charge-Coupled Devices

Conference · Mon May 15 00:00:00 EDT 2006

OSTI ID:919255

Holland, Stephen E

We have developed fully depleted, back-illuminated CCDs thatbuild upon earlier research and development efforts directed towardstechnology development of silicon-strip detectors used inhigh-energy-physics experiments. The CCDs are fabricated on the same typeof high-resistivity, float-zone-refined silicon that is used for stripdetectors. The use of high-resistivity substrates allows for thickdepletion regions, on the order of 200-300 um, with corresponding highdetection efficiency for near-infrared andsoft x-ray photons. We comparethe fully depleted CCD to thep-i-n diode upon which it is based, anddescribe the use of fully depleted CCDs in astronomical and x-ray imagingapplications.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Director. Office of Science. High EnergyPhysics
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 919255
• Report Number(s): LBNL-61468; R&D Project: PS5MSL; BnR: KA1503020; TRN: US0806333
• Resource Relation: Conference: International Symposium on Detector Developmentfor Particle, Astrophysics, and Synchrotron Radiation Experiments(SNIC06), Stanford Linear Accelerator Center, April 3-6,2006
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ASTROPHYSICS
CHARGE-COUPLED DEVICES
DETECTION
EFFICIENCY
HIGH ENERGY PHYSICS
PHOTONS
SILICON
SUBSTRATES
SYNCHROTRON RADIATION
charge-coupled device fully depleted back illuminated highresistivity silicon pin diode