Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

The origins of growth stresses in amorphous semiconductor thin films.

Journal Article · · Proposed for publication in Physical Review Letters.
OSTI ID:917484

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
917484
Report Number(s):
SAND2003-0975J
Journal Information:
Proposed for publication in Physical Review Letters., Journal Name: Proposed for publication in Physical Review Letters.
Country of Publication:
United States
Language:
English

Similar Records

Stress relaxation of tetrahedral amorphous-carbon (ta-C) thin films by pulsed excimer laser annealing.
Journal Article · Tue Jun 01 00:00:00 EDT 2004 · Proposed for publication in Journal of Applied Physics. · OSTI ID:876272

Measuring stress gradients by etch-back in annealed diamond-like tetrahedral amorphous-carbon thin films.
Journal Article · Mon Dec 31 23:00:00 EST 2007 · Proposed for publication in Thin Solid Films. · OSTI ID:943951

Origins of Residual Stress in Polycrystalline Thin Films.
Conference · Sun Jul 01 00:00:00 EDT 2012 · OSTI ID:1116818