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Probing occupied states of the molecular layer in Au-octanedithiol-GaAs diodes.

Journal Article · Tue Nov 30 23:00:00 EST 2004 · Proposed for publication in the Journal of Physical Chemistry B.

OSTI ID:915600

Loo, Y L ^[1]; Halls, M D ^[2]; West, Ken W ^[3]; Lang, D V; Raghavachari, K ^[2]

Lucent Technologies, NJ
Indiana University, IN
University ot Texas, Austin

No abstract prepared.

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Research Organization:: Sandia National Laboratories

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 915600

Report Number(s):: SAND2004-6672J

Journal Information:: Proposed for publication in the Journal of Physical Chemistry B., Journal Name: Proposed for publication in the Journal of Physical Chemistry B.

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GOLD COMPLEXES
SEMICONDUCTOR DIODES
THIOLS