Skip to main content

Parametric study of Ga[1-x]In[x]N[y]As[1-y]/GaAs quantum wells for 1.3[mu]m laser operation.

Journal Article · Tue Dec 31 23:00:00 EST 2002 · Proposed for publication in Applied Physics Letters.

DOI:https://doi.org/10.1063/1.1561154· OSTI ID:915588

Chow, Weng Wah Dr; Harris, J S ^[1]

Stanford University, Stanford, CA

No abstract prepared.

Print

Research Organization:: Sandia National Laboratories

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 915588

Report Number(s):: SAND2003-0484J

Journal Information:: Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters.

Country of Publication:: United States

Language:: English

Similar Records

Continuous Wave Operation of 1.3{sub micro}m Vertical Cavity InGaAsN Quantum Well Lasers

Conference · Wed Jul 19 00:00:00 EDT 2000 · OSTI ID:761836

Charge-Separation Effects in 1.3{micro}m GaAsSb Type II Quantum well Laser Gain

Journal Article · Mon Nov 27 23:00:00 EST 2000 · Applied Physics Letters · OSTI ID:769040

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m

Journal Article · Fri Dec 14 23:00:00 EST 2012 · AIP Advances · OSTI ID:22107642

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
PARAMETRIC ANALYSIS
QUANTUM WELLS