Microscopic modeling of gain and luminescence in semiconductors.
- University of Arizona, Tucson, AZ
- Phillips-Universitüt Marburg, Marburg, Germany
The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 915189
- Report Number(s):
- SAND2003-0648J
- Journal Information:
- Proposed for publication in the IEEE Special Issue on Quantum Electronics., Journal Name: Proposed for publication in the IEEE Special Issue on Quantum Electronics.
- Country of Publication:
- United States
- Language:
- English
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