Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods.

Journal Article · Sun Oct 31 23:00:00 EST 2004 · Proposed for publication in the Applied Physics Letters.

OSTI ID:915158

Fischer, Arthur Joseph; Kim, Jin K ^[1]; Crawford, Mary Hagerott; Gessmann, Th ^[2]; Shah, J M ^[2]; Xi, J -Q ^[2]; Xi, Y ^[2]; Allerman, Andrew Alan; Schubert, E Fred ^[3]; Bogart, Katherine Huderle Andersen

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1. Rensselaer Polytechnic Institute, Troy, NY
2. Rensselaer Polytechnic Institute, Troy, NY
3. Rensselaer Polytechnic Institute, Troy, NY

The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate ({+-}3 C). A theoretical model for the dependence of the diode forward voltage (V{sub f}) on junction temperature (T{sub j}) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6 K/W is obtained with the device mounted with thermal paste on a heat sink.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 915158
• Report Number(s): SAND2004-6251J
• Journal Information: Proposed for publication in the Applied Physics Letters., Journal Name: Proposed for publication in the Applied Physics Letters.
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM NITRIDES
COMPARATIVE EVALUATIONS
GALLIUM NITRIDES
LIGHT EMITTING DIODES
MEASURING METHODS
SEMICONDUCTOR JUNCTIONS
TEMPERATURE COEFFICIENT
TEMPERATURE MEASUREMENT
ULTRAVIOLET RADIATION