Room temperature magnetism in semiconducting films of ZnO doped with ferric ions

Journal Article · Sun Jan 01 04:00:00 EST 2006 · J. Appl. Phys.

DOI:https://doi.org/10.1063/1.2172916· OSTI ID:914252

Yoon, S; Chen, Y; Heiman, D; Yang, A; Sun, N; Vittoria, C; Harris, V

Films consisting of Zn{sub 1-x}Fe{sub x}O were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al{sub 2}O{sub 3} at 300 K, room temperature average saturation magnetization, {l_angle}4{pi}M{sub s}{r_angle}, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125{+-}0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation magnetization of the so-called magnetic layer containing ferric ions. We believe that we have produced a host semiconductor material doped with impurities of ferrimagnetic ordering.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 914252
• Report Number(s): BNL--78820-2007-JA
• Journal Information: J. Appl. Phys., Journal Name: J. Appl. Phys. Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
DEPOSITION
FERRIMAGNETIC RESONANCE
FILMS
IMPURITIES
LASERS
MAGNETISM
MAGNETIZATION
SATURATION
SEMICONDUCTOR MATERIALS
SQUID DEVICES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
ZINC OXIDES
national synchrotron light source