Structural Defects and Luminescence Features in Heteroepitaxial GaN Grown on On-Axis and Misoriented Substrates
The microstructure and luminescence properties of a series of GaN epilayers grown on sapphire and SiC substrates with various misorientations have been correlated to assess the origins of the luminescence features in the misoriented samples. Samples grown on 3.5 degree offcut SiC and 5 and 9 degree offcut sapphire substrates both exhibit photoluminescence peaks near {approx}3.2 and {approx}3.4 eV, which are absent in the on-axis SiC and sapphire cases. Transmission electron microscopy shows that the misoriented samples have configurations of I{sub 1} basal plane stacking faults, which fold into prismatic stacking faults with stair-rod dislocations at their intersections. The luminescence features are proposed to possibly arise from transitions involving the prismatic stacking faults and/or the stair-rod dislocations associated with their mutual intersections and their intersections with the basal plane stacking faults.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 913825
- Report Number(s):
- BNL--78393-2007-JA
- Journal Information:
- J. Appl. Phys., Journal Name: J. Appl. Phys. Vol. 97; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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