Refractive Index and Hygroscopic Stability of Al(x)Ga(1-x)As Native Oxides

Journal Article · Thu Jul 08 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123571· OSTI ID:9018

Blum, O; Epstein, R J; HOu, H; Hall, D C; Kou, L; Luo, Y; Wu, H

The authors present prism coupling measurements on Al{sub x}Ga{sub 1{minus}x}As native oxides showing the dependence of refractive index on composition (0.3 {le} x {le} 0.97), oxidation temperature (400 {le} T {le} 500), and carrier gas purity. Index values range from n = 1.490 (x = 0.9, 400) to 1.707 (x = 0.3, 500 C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of Al{sub x}Ga{sub 1{minus}x}As (x {le} 0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O{sub 2} in the N{sub 2} + H{sub 2}O process gas. The higher index values are attributed to a greater degree of oxidation of the Ga in the film.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 9018
• Report Number(s): SAND99-1752J; TRN: AH200122%%135
• Journal Information: Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 8 Jul 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
MOISTURE
OXIDATION
REFRACTIVE INDEX
STABILITY
WETTABILITY
ALUMINIUM OXIDES
GALLIUM OXIDES
ARSENIC OXIDES