Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches
In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 901262
- Report Number(s):
- SLAC-PUB-12407
- Journal Information:
- AIP Conf.Proc.877:273-279,2006, Journal Name: AIP Conf.Proc.877:273-279,2006
- Country of Publication:
- United States
- Language:
- English
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Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
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