Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Resist-based measurement of contrast transfer function in a 0.3-NAmicrofield optic

Conference ·
OSTI ID:900652

Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patterning, the projection optics must be of extremely high quality in order to meet this potential. One key metric of the projection optic quality is the contrast transfer function (CTF), which is a measure of the aerial image contrast as a function of pitch. A static microfield exposure tool based on the 0.3-NA MET optic and operating at a wavelength of 13.5 nm has been installed at the Advanced Light Source, a synchrotron facility at the Lawrence Berkeley National Laboratory. This tool provides a platform for a wide variety of research into EUV lithography. In this work we present resist-based measurements of the contrast transfer function for the MET optic. These measurements are based upon line/space patterns printed in several different EUV photoresists. The experimental results are compared with the CTF in aerial-image simulations using the aberrations measured in the projection optic using interferometry. In addition, the CTF measurements are conducted for both bright-field and dark-field mask patterns. Finally, the orientation dependence of the CTF is measured in order to evaluate the effect of non-rotationally symmetric lens aberrations. These measurements provide valuable information in interpreting the results of other experiments performed using the MET and similar systems.

Research Organization:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Organization:
USDOE Director. Office of Science. Office of Basic EnergyScience; Advanced Micro Devices, Applied Materials, Atmel, Cadence,Canon, Cymer, DuPont, Ebara, Intel, KLA-Tencor, Mentor Gaphics, NikonResearch, Novellus /systems, Panoramic Technologies, Photronics,Synopsis, Tokyo Electron, UC Discovery Grant
DOE Contract Number:
AC02-05CH11231
OSTI ID:
900652
Report Number(s):
LBNL--60544; BnR: 600303000
Country of Publication:
United States
Language:
English

Similar Records

Lithographic characterization of low-order aberrations in a 0.3-NAEUV microfield exposure tool
Conference · Tue Feb 28 23:00:00 EST 2006 · OSTI ID:901033

Modeling of EUV photoresists with a resist point spreadfunction
Conference · Fri Dec 31 23:00:00 EST 2004 · OSTI ID:900654

Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool
Journal Article · Sun Feb 22 23:00:00 EST 2009 · Journal of Micronano Lithography, MEMS and MOEMS · OSTI ID:960237