Correlation effects on the Compton profile of silicon
Journal Article
·
· Physical Review Letters
OSTI ID:899529
Ab initio nonlocal pseudopotential variational quantum Monte Carlo techniques are used to compute the correlation effects on the valence momentum density and Compton profile of silicon. Our results for this case are in excellent agreement with the Lam-Platzman correction computed within the local density approximation. Within the approximations used, we rule out valence electron correlations as the dominant source of discrepancies between calculated and measured Compton profiles of silicon.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE; National Science Foundation (NSF)
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 899529
- Report Number(s):
- LBNL-40508; PRLTAO; TRN: US200708%%193
- Journal Information:
- Physical Review Letters, Vol. 80, Issue 19; Related Information: Journal Publication Date: 05/11/1998; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
Similar Records
Correlation Effects in the Compton Profile of Silicon
Quantum Monte Carlo Endstation for Petascale Computing
Compton profiles of Si: pseudopotential Calculation andReconstructionEffects
Journal Article
·
Fri May 01 00:00:00 EDT 1998
· Physical Review Letters
·
OSTI ID:899529
Quantum Monte Carlo Endstation for Petascale Computing
Technical Report
·
Wed Mar 02 00:00:00 EST 2011
·
OSTI ID:899529
Compton profiles of Si: pseudopotential Calculation andReconstructionEffects
Journal Article
·
Thu May 01 00:00:00 EDT 1997
· Physical Review B
·
OSTI ID:899529