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Title: Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering

Journal Article · · Surface and Coatings Technology

Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE. Assistant Secretary for Energy Efficiency andRenewable Energy. Office of the Building Technology Program; FulbrightCommission Fellowship
DOE Contract Number:
DE-AC02-05CH11231
OSTI ID:
898939
Report Number(s):
LBNL-59900; SCTEEJ; R&D Project: 677616; BnR: BT0304030; TRN: US200706%%446
Journal Information:
Surface and Coatings Technology, Vol. 201; Related Information: Journal Publication Date: 2006; ISSN 0257-8972
Country of Publication:
United States
Language:
English