Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering
Journal Article
·
· Surface and Coatings Technology
Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE. Assistant Secretary for Energy Efficiency andRenewable Energy. Office of the Building Technology Program; FulbrightCommission Fellowship
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 898939
- Report Number(s):
- LBNL--59900; BnR: BT0304030
- Journal Information:
- Surface and Coatings Technology, Journal Name: Surface and Coatings Technology Vol. 201; ISSN 0257-8972; ISSN SCTEEJ
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
36 MATERIALS SCIENCE
ACTIVATION ENERGY
BACKSCATTERING
DEPOSITION
ELECTRICAL PROPERTIES
MAGNETRONS
MIXTURES
NITROGEN
OXYGEN
PARTIAL PRESSURE
SPUTTERING
STOICHIOMETRY
THIN FILMS
TUNGSTEN
X-RAY DIFFRACTION
tungsten oxynitride optical properties sputtering
36 MATERIALS SCIENCE
ACTIVATION ENERGY
BACKSCATTERING
DEPOSITION
ELECTRICAL PROPERTIES
MAGNETRONS
MIXTURES
NITROGEN
OXYGEN
PARTIAL PRESSURE
SPUTTERING
STOICHIOMETRY
THIN FILMS
TUNGSTEN
X-RAY DIFFRACTION
tungsten oxynitride optical properties sputtering