LDRD final report on Si nanocrystal as device prototype for spintronics applications.

doi:https://doi.org/10.2172/896555

Title: LDRD final report on Si nanocrystal as device prototype for spintronics applications.

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Abstract

The silicon microelectronics industry is the technological driver of modern society. The whole industry is built upon one major invention--the solid-state transistor. It has become clear that the conventional transistor technology is approaching its limitations. Recent years have seen the advent of magnetoelectronics and spintronics with combined magnetism and solid state electronics via spin-dependent transport process. In these novel devices, both charge and spin degree freedoms can be manipulated by external means. This leads to novel electronic functionalities that will greatly enhance the speed of information processing and memory storage density. The challenge lying ahead is to understand the new device physics, and control magnetic phenomena at nanometer length scales and in reduced dimensions. To meet this goal, we proposed the silicon nanocrystal system, because: (1) It is compatible with existing silicon fabrication technologies; (2) It has shown strong quantum confinement effects, which can modify the electric and optical properties through directly modifying the band structure; and (3) the spin-orbital coupling in silicon is very small, and for isotopic pure {sup 28}Si, the nuclear spin is zero. These will help to reduce the spin-decoherence channels. In the past fiscal year, we have studied the growth mechanism of silicon-nanocrystals embedded inmore »« less

Authors:: Carroll, Malcolm S; Verley, Jason C; Pan, Wei; Banks, James Clifford; Brewer, Luke N; Sheng, Josephine Juin-Jye; Barton, Daniel Lee; Dunn, Roberto G

Publication Date:: 2006-11-01

Research Org.:: Sandia National Laboratories

Sponsoring Org.:: USDOE

OSTI Identifier:: 896555

Report Number(s):: SAND2006-7101
TRN: US200703%%737

DOE Contract Number:: AC04-94AL85000

Resource Type:: Technical Report

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; FABRICATION; MAGNETIC PROPERTIES; MICROELECTRONICS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON; SPIN; TRANSISTORS; NANOSTRUCTURES; Silicon-Optical properties.; Solid state electronics.; Silicon compounds; Microelectronics-Materials.; Spintronics.

Citation Formats


                    Carroll, Malcolm S, Verley, Jason C, Pan, Wei, Banks, James Clifford, Brewer, Luke N, Sheng, Josephine Juin-Jye, Barton, Daniel Lee, and Dunn, Roberto G. LDRD final report on Si nanocrystal as device prototype for spintronics applications..  United States: N. p., 2006. 
        Web.  doi:10.2172/896555.

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                    Carroll, Malcolm S, Verley, Jason C, Pan, Wei, Banks, James Clifford, Brewer, Luke N, Sheng, Josephine Juin-Jye, Barton, Daniel Lee, & Dunn, Roberto G. LDRD final report on Si nanocrystal as device prototype for spintronics applications..  United States.  https://doi.org/10.2172/896555

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                    Carroll, Malcolm S, Verley, Jason C, Pan, Wei, Banks, James Clifford, Brewer, Luke N, Sheng, Josephine Juin-Jye, Barton, Daniel Lee, and Dunn, Roberto G. Wed .  
        "LDRD final report on Si nanocrystal as device prototype for spintronics applications.".  United States.  https://doi.org/10.2172/896555.  https://www.osti.gov/servlets/purl/896555.

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@article{osti_896555,

  title        = {LDRD final report on Si nanocrystal as device prototype for spintronics applications.},

  author       = {Carroll, Malcolm S and Verley, Jason C and Pan, Wei and Banks, James Clifford and Brewer, Luke N and Sheng, Josephine Juin-Jye and Barton, Daniel Lee and Dunn, Roberto G},

  abstractNote = {The silicon microelectronics industry is the technological driver of modern society. The whole industry is built upon one major invention--the solid-state transistor. It has become clear that the conventional transistor technology is approaching its limitations. Recent years have seen the advent of magnetoelectronics and spintronics with combined magnetism and solid state electronics via spin-dependent transport process. In these novel devices, both charge and spin degree freedoms can be manipulated by external means. This leads to novel electronic functionalities that will greatly enhance the speed of information processing and memory storage density. The challenge lying ahead is to understand the new device physics, and control magnetic phenomena at nanometer length scales and in reduced dimensions. To meet this goal, we proposed the silicon nanocrystal system, because: (1) It is compatible with existing silicon fabrication technologies; (2) It has shown strong quantum confinement effects, which can modify the electric and optical properties through directly modifying the band structure; and (3) the spin-orbital coupling in silicon is very small, and for isotopic pure {sup 28}Si, the nuclear spin is zero. These will help to reduce the spin-decoherence channels. In the past fiscal year, we have studied the growth mechanism of silicon-nanocrystals embedded in silicon dioxide, their photoluminescence properties, and the Si-nanocrystal's magnetic properties in the presence of Mn-ion doping. Our results may demonstrate the first evidence of possible ferromagnetic orders in Mn-ion implanted silicon nanocrystals, which can lead to ultra-fast information process and ultra-dense magnetic memory applications.},

  doi          = {10.2172/896555},

  url          = {https://www.osti.gov/biblio/896555},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2006},

  month        = {11}

}

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