Quantum computer developement with single ion implantation

Journal Article · Fri Apr 09 00:00:00 EDT 2004 · Quantum Information Processing

DOI:https://doi.org/10.1007/s11128-004-3879-1· OSTI ID:894700

Persaud, A; Park, S J; Liddle, J A; Rangelow, I W; Bokor, J; Keller, R; Allen, F I; Schneider, D H; Schenkel, T

Spins of single donor atoms are attractive candidates forlarge scale quantum information processing in silicon. Formation ofdevices with a few qubits is crucial for validation of basic ideas anddevelopment of a scalable architecture. We describe our development of asingle ion implantation technique for placement of single atoms intodevice structures. Collimated highly charged ion beams are aligned with ascanning probe microscope. Enhanced secondary electron emission due tohigh ion charge states (e.g., 31P13+, or 126Te33+) allows efficientdetection of single ion impacts. Studies of electrical activation of lowdose, low energy implants of 31P in silicon show a drastic effect ofdopant segregation to the SiO2/Si interface, while Si3N4/Si retards 31Psegregation. We discuss resolution limiting factors in ion placement, andprocess challenges for integration of single atom arrays with controlgates and single electron transistors.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE, Lawrence Livermore National Laboratory; US Departmentof Defense. Army Research Office Contract MOD707501
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 894700
• Report Number(s): LBNL-54683; R&D Project: 43GW02
• Journal Information: Quantum Information Processing, Vol. 3, Issue 1-5; Related Information: Journal Publication Date: 10/04
• Country of Publication: United States
• Language: English

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