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Ion beam induced charge (IBIC) studies of silicon germanium heterojunction bipolar transistors (HBTs).

Conference ·
OSTI ID:893550
 [1];  [2]; ;  [3]
  1. Vanderbilt University, Nashville, TN
  2. Vanderbilt University, Nashville, TN
  3. NASA-GFC consultant, Brookneal, VA
+ Show Author Affiliations

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
893550
Report Number(s):
SAND2006-4223C
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
GERMANIUM SILICIDES
HETEROJUNCTIONS
ION BEAMS
TRANSISTORS