skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of Post-Deposition Annealing on the Material Characteristics of Ultrathin HfO (2) Films on Silicon

Journal Article · · J.Appl.Phys.97:023704,2005
OSTI ID:893307

No abstract prepared.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
893307
Report Number(s):
SLAC-REPRINT-2005-273; TRN: US200625%%527
Journal Information:
J.Appl.Phys.97:023704,2005, Journal Name: J.Appl.Phys.97:023704,2005
Country of Publication:
United States
Language:
English

Similar Records

Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO 2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
Journal Article · Thu May 01 00:00:00 EDT 2014 · Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics · OSTI ID:893307

Effects of post-deposition annealing in O{sub 2} on the electrical characteristics of LaAlO{sub 3} films on Si
Journal Article · Mon Jul 11 00:00:00 EDT 2005 · Applied Physics Letters · OSTI ID:893307

Effects of rapid thermal annealing on the properties of HfO{sub 2}/La{sub 2}O{sub 3} nanolaminate films deposited by plasma enhanced atomic layer deposition
Journal Article · Thu Jan 15 00:00:00 EST 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:893307