On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

Conference · Mon May 01 04:00:00 EDT 2006

DOI:https://doi.org/10.1109/WCPEC.2006.279795· OSTI ID:891549

Mahan, A H; Ahrenkiel, S P; Roy, B; Schropp, R E.I.; Li, H; Ginley, D S

We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600 C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasing film CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO.
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 891549
• Report Number(s): NREL/CP-520-39901
• Country of Publication: United States
• Language: English

Related Subjects

08 HYDROGEN
14 SOLAR ENERGY
36 MATERIALS SCIENCE
ANNEALING
CRYSTALLITE NUCLEATION RATE
CRYSTALLIZATION
CRYSTALLIZATION KINETICS
DEFECTS
DEPOSITION
ENERGY CONVERSION
FILM HYDROGEN CONTENT
FULL WIDTH AT HALF MAXIMUM (FWHM)
GRAIN GROWTH
GRAIN GROWTH RATE
HYDROGEN
INCUBATION
KINETICS
LINE BROADENING
NUCLEATION
PV
Silicon Materials and Devices
Solar Energy - Photovoltaics
THIN FILMS
X-RAY DIFFRACTION