skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical measurement techniques and problems.

Abstract

No abstract prepared.

Authors:
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
884697
Report Number(s):
SAND2005-8033C
TRN: US200616%%5
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 44th AIAA Aerospace Sciences Meeting held January 9-12, 2006 in Reno, NV.
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; ELECTRIC MEASURING INSTRUMENTS; PERFORMANCE; LIMITING VALUES

Citation Formats

Miller, Paul Albert. Electrical measurement techniques and problems.. United States: N. p., 2006. Web.
Miller, Paul Albert. Electrical measurement techniques and problems.. United States.
Miller, Paul Albert. Sun . "Electrical measurement techniques and problems.". United States. doi:.
@article{osti_884697,
title = {Electrical measurement techniques and problems.},
author = {Miller, Paul Albert},
abstractNote = {No abstract prepared.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • A microwave absorption technique based on cavity perturbation theory is applicable for electrical conductivity measurements of both small, single-crystal particles and finely divided powder samples when {sigma} values fall in either the low ({sigma}<0.1{Omega}{sup -1}cm{sup -1}) or the intermediate (0.1 <{sigma}<100{Omega}{sup -1}cm{sup -l}) conductivity region. If the skin depth of the material becomes significantly smaller than the sample dimension parallel to the E-field, an appreciable error can be introduced into the calculated conductivity values; however, this discrepancy is eliminated by correcting for the field attenuation associated with the penetration depth of the microwaves and accurate absolute values can be obtained.more » When combined with microwave Hall effect measurements of mobility, {mu}, carrier densities can be calculated, for electrons N{sub o}={sigma}/{rho}e{mu} where e is the electron charge and {sigma} is the density of the solid. This approach eliminates electrode contacts as well as errors due to charge transfer across grain boundaries and particle-particle contacts. The application of these microwave absorption techniques to small particles having high surface/volume ratios, such as catalyst supports and oxide catalysts, under controlled environments can provide fundamental information about absorption and catalytic processes on such semiconductor surfaces. Applications to ZnO, Li-promoted ZnO, and carbon black powders demonstrate this capability.« less
  • Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentifymore » the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.« less
  • Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentifymore » the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.« less
  • The advent of high current (1 to 100 kA), moderate energy (>10 MeV), short pulse (1 to 100 ns) electron accelerators used for charged particle beam research has motivated a need to complement standard diagnostics with development of new diagnostic techniques to measure electron beam parameters. A brief survey is given of the diagnostics for measuring beam current, position, size, energy, and emittance. While a broad scope of diagnostics will be discussed, this survey will emphasize diagnostics used on the Experimental Test Accelerator (ETA) and Advanced Test Accelerator (ATA). Focus is placed on diagnostics measuring beam current, position and size.more » Among the diagnostics discussed are resistive wall current monitors, B/sub theta/ loops, Rogowski coils, Faraday cups, and x-ray wire diagnostics. Operation at higher current levels also increases radiation and electromagnetic pulse interference. These difficulties and methods for circumventing them are also discussed.« less
  • Techniques and problems surrounding liquid measurement are discussed. Non-custody measurements are important for inventory control, cost effective blending operations, accounting and tax information, and loss control. Most internal measurements are used as a backup to custody transfer measurements. However, good systems analysis can only be done if all the data is good. Personnel should have a strong sense of the above, plus a technical competence and pride in their practice of the art of measurement.