Magnetic Transparent Conducting Oxide Film And Method Of Making
- Richland, WA
- Honolulu, HI
Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 O·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- DOE Contract Number:
- AC06-76RL01830
- Assignee:
- Battelle Memorial Institute (Richland, WA)
- Patent Number(s):
- US 7,011,732
- Application Number:
- 10/854546
- OSTI ID:
- 880474
- Country of Publication:
- United States
- Language:
- English
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