Results from irradiation tests on D0 Run 2a silicon detectors at the Radiation Damage Facility at Fermilab

Technical Report · Wed Mar 01 00:00:00 EST 2006

DOI:https://doi.org/10.2172/879081· OSTI ID:879081

Gardner, J; Cerber, C; Ke, Z; Korjanevsky, S; Leflat, A; Lehner, F; Lipton, R; Lackey, J; Merkin, M; Rapidis, P; Rykalin, V; Shabalina, E; Spiegel, L; Stutte, L; Webber, B

Several different spare modules of the D0 experiment Silicon Microstrip Tracker (SMT) have been irradiated at the Fermilab Booster Radiation Damage Facility (RDF). The total dose received was 2.1 MRads with a proton flux of {approx} 3 {center_dot} 10{sup 11} p/cm{sup 2} sec. The irradiation was carried out in steps of 0.3 or 0.6 MRad, with several days between the steps to allow for annealing and measurements. The leakage currents and depletion voltages of the devices increased with dose, as expected from bulk radiation damage. The double sided, double metal devices showed worse degradation than the less complex detectors.

• Research Organization: Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76CH03000
• OSTI ID: 879081
• Report Number(s): FERMILAB-TM-2345-E; TRN: US0701139
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
FERMILAB
IRRADIATION
LEAKAGE CURRENT
PROTONS
RADIATIONS
SILICON
Instrumentation