Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Study of the Radiation Hardness of Irradiated AtoM Front-End Chips of the BaBar Silicon Vertex Tracker

Conference ·
OSTI ID:878723
; ; ; ; ; ;
No abstract prepared.
Research Organization:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
878723
Report Number(s):
SLAC-REPRINT-2004-416
Country of Publication:
United States
Language:
English

Similar Records

Radiation Damage Studies for the BaBar Silicon Vertex Tracker
Conference · Fri Sep 30 00:00:00 EDT 2005 · OSTI ID:878382
Lessons Learned From the BaBar Silicon Vertex Tracker
Conference · Tue Aug 16 00:00:00 EDT 2005 · OSTI ID:878828
What Can Be Learned From the BaBar Silicon Vertex Tracker Running Experience
Conference · Thu Feb 23 23:00:00 EST 2006 · OSTI ID:876614

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC EQUIPMENT
Instrumentation
INST
RADIATION HARDENING
SI SEMICONDUCTOR DETECTORS