Method and apparatus for altering material

Stinnett, Regan W; Greenly, John B

Method and apparatus for altering material

Patent · 01 January 2002

OSTI ID:875303

Stinnett, Regan W ^[1]; Greenly, John B ^[2]

Albuquerque, NM
Lansing, NY

Methods and apparatus for thermally altering the near surface characteristics of a material are described. In particular, a repetitively pulsed ion beam system comprising a high energy pulsed power source and an ion beam generator are described which are capable of producing single species high voltage ion beams (0.25-2.5 MeV) at 1-1000 kW average power and over extended operating cycles (10.sup.8). Irradiating materials with such high energy, repetitively pulsed ion beams can yield surface treatments including localized high temperature anneals to melting, both followed by rapid thermal quenching to ambient temperatures to achieve both novel and heretofore commercially unachievable physical characteristics in a near surface layer of material.

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Research Organization:: AT & T CORP

DOE Contract Number:: AC04-76DP00789

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US RE37537

OSTI ID:: 875303

Country of Publication:: United States

Language:: English

References (20)

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Mechanical and Frictional Properties of Tool Steels Exposed to HPIB Irradiation Kutuzov, V. L.; Ovsyannikov, M. Yu.; Romasov, I. G. Physica Status Solidi (a), Vol. 112, Issue 1 https://doi.org/10.1002/pssa.2211120147	journal	March 1989
Modification of the properties of metals by high-power ion beams Pogrebnyak, A. D.; Remnev, G. E.; Chistyakov, S. A. Soviet Physics Journal, Vol. 30, Issue 1 https://doi.org/10.1007/BF00896012	journal	January 1987
Structural, physical and chemical changes induced in metals and alloys exposed to high power ion beams Pogrebnjak, A. D.; Remnev, G. E.; Kurakin, I. E. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 36, Issue 3 https://doi.org/10.1016/0168-583X(89)90671-X	journal	March 1989
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Epitaxial NiSi ₂ formation by pulsed ion beam annealing Chen, L. J.; Hung, L. S.; Mayer, J. W. Applied Physics Letters, Vol. 40, Issue 7 https://doi.org/10.1063/1.93192	journal	April 1982
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