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Title: Method and apparatus for forming a carbon-silicon bond in a silane

Patent ·
OSTI ID:874917

A method for forming at least one product silane, comprising reacting a transition metal hydride with a starting silane in a presence of a catalyst and at a temperature that exceeds a threshold temperature associated with said reacting.

Research Organization:
General Electric Co., Schenectady, NY (United States)
DOE Contract Number:
FC02-98CH10931
Assignee:
General Electric Company (Schenectady, NY)
Patent Number(s):
US 6489501
OSTI ID:
874917
Country of Publication:
United States
Language:
English

References (4)

The origins of Helicobacter (Campylobacter) pylori journal February 1990
Reactivity of hypervalent silicon derivatives. One step synthesis of mono- and di-hydrogenosilanes journal May 1989
Reactivity of dianionic hexacoordinated silicon complexes toward nucleophiles: a new route to organosilanes from silica journal May 1988
Cover Picture (Angew. Chem. Int. Ed. Engl. 12/1986) journal December 1986