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Title: Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom

Patent ·
OSTI ID:873930

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

Research Organization:
Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
DOE Contract Number:
W-7405-ENG-82
Assignee:
Iowa State University Research Foundation (Ames, IA)
Patent Number(s):
US 6274293
Application Number:
09/086,790
OSTI ID:
873930
Country of Publication:
United States
Language:
English

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