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Title: Large area atmospheric-pressure plasma jet

Patent ·
OSTI ID:873868

Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
DOE Contract Number:
W-7405-ENG-36
Assignee:
Regents of University of California (Los Alamos, NM)
Patent Number(s):
US 6262523
OSTI ID:
873868
Country of Publication:
United States
Language:
English

References (12)

A Ceramic Plasma Torch for Determining Silicon Content in HF Solutions by Inductively Coupled Plasma Atomic Emission Spectrometry journal August 1996
Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures journal June 1995
Synthesis of plasma-polymerized tetraethoxysilane and hexamethyldisiloxane films prepared by atmospheric pressure glow discharge journal August 1995
Development and application of a microbeam plasma generator journal February 1992
Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films journal January 1992
Plasma Chemical Vapor Deposition of SiO2 on Air‐Exposed Surfaces by Cold Plasma Torch journal August 1995
The mechanism of the stabilisation of glow plasma at atmospheric pressure journal August 1990
Library journal November 2005
Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate journal November 1987
Open air deposition of SiO 2 film from a cold plasma torch of tetramethoxysilane‐H 2 ‐Ar system journal January 1994
Characteristics of Silicon Dioxide Films on Patterned Substrates Prepared by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone journal May 1996
Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone journal March 1994

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