Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:873807

Iwancizko, Eugene ^[1]; Jones, Kim M ^[2]; Crandall, Richard S ^[3]; Nelson, Brent P ^[4]; Mahan, Archie Harvin ^[4]

---

1. Lafayette, CO
2. Arvada, CO
3. Boulder, CO
4. Golden, CO

The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC36-98GO10337
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 6251183
• OSTI ID: 873807
• Country of Publication: United States
• Language: English

Related Subjects

rapid
low-temperature
epitaxial
growth
hot-element
assisted
chemical
vapor
deposition
process
provides
depositing
layer
crystalline
substrate
comprising
steps
providing
chamber
element
capable
heating
introducing
temperature
sufficient
decompose
source
gas
passing
contact
forming
assisted chemical
chemical vapor
vapor deposition
temperature sufficient
deposition process
epitaxial layer
epitaxial growth
source gas
crystalline substrate
element capable
/117/