Electrical isolation of component cells in monolithically interconnected modules
- Golden, CO
A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- Midwest Research Institute (Kansas City, MI)
- Patent Number(s):
- US 6239354
- OSTI ID:
- 873764
- Country of Publication:
- United States
- Language:
- English
Monolithically interconnected InGaAs TPV module development
|
conference | January 1996 |
Similar Records
High-Performance, 0.6-eV, GA0.32In0.68As/In0.32P0.68 Thermophotovoltaic Converters and Monolithically Interconnected Modules
n/p/n tunnel junction InGaAs Monolithic Interconnected Module (MIM)
Related Subjects
isolation
component
cells
monolithically
interconnected
modules
photovoltaic
module
electrically
connected
comprises
substrate
plurality
formed
cell
including
primary
absorber
layer
light
receiving
surface
p-region
p-type
dopant
n-region
n-type
adjacent
form
single
pn-junction
diode
intervening
interfacial
regions
conductivity
type
orientation
reverse-breakdown
voltage
sufficient
prevent
inter-cell
shunting
isolated
vertical
trench
trough
interconnects
disposed
trenches
contacting
doped
opposite
contacts
receiving surface
n-type dopant
adjacent cells
electrically isolated
electrical contacts
cell including
photovoltaic module
breakdown voltage
electrical contact
electrically connected
p-type dopant
adjacent cell
conductivity type
electrical isolation
absorber layer
region formed
type dopant
interconnected photovoltaic
electrically isolate
monolithically interconnected
cell electric
interconnected modules
/136/257/438/