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Buffer layers on biaxially textured metal substrates

Patent ·
OSTI ID:873749
 [1];  [2];  [2];  [2];  [2]
  1. Woodstock, GA
  2. Knoxville, TN
+ Show Author Affiliations

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Research Organization:
LOCKHEED MARTIN ENERGY RES COR
DOE Contract Number:
AC05-96OR22464
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Number(s):
US 6235402
OSTI ID:
873749
Country of Publication:
United States
Language:
English

References (8)

LaAlO3 thin films deposited on silicon and sapphire as buffer layers for YBa2Cu3O7?x journal January 1994
Origin of Orientation in Sol-Gel-Derived Lead Titanate Films journal May 1993
High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals journal September 1996
Sol-gel Synthesis of LaAlO 3 ; Epitaxial Growth of LaAlO 3 Thin Films on SrTiO 3 (100) journal April 1997
Properties of YBa2Cu3O7−δ thick films on flexible buffered metallic substrates journal October 1995
The Structure of Thin Oxide Films Formed on Nickel Crystals journal January 1969
Preparation of lanthanum aluminate thin films by a sol-gel procedure using alkoxide precursors journal March 1994
Epitaxially grown sputtered LaAlO 3 films journal November 1990

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Related Subjects

/428/117/
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