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Title: Method and apparatus for monitoring plasma processing operations

Abstract

The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasmamore » step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.« less

Inventors:
 [1];  [1];  [2]
  1. (Albuquerque, NM)
  2. (Rio Rancho, NM)
Publication Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873262
Patent Number(s):
US 6123983
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; apparatus; monitoring; plasma; processing; operations; relates; various; aspects; process; specifically; processes; aspect; manner; calibrating; initializing; assembly; type; calibration; address; wavelength; shifts; intensity; associated; optical; emissions; data; obtained; light; directed; window; determine; effect; inner; surface; therethrough; operation; gathering; device; types; evaluations; undertaken; run; typically; currently; chamber; health; identification; analysis; included; endpoint; recipe; clean; conditioning; wafer; discrete; discernible; portion; step; multiple; final; above-noted; implemented; semiconductor; fabrication; facility; distribution; wafers; production; semiconductor fabrication; various aspects; gathering device; fabrication facility; final aspect; intensity shifts; health evaluations; plasma step; emissions analysis; plasma processes; plasma health; process identification; calibration light; processing operations; plasma clean; conditioning wafer; data gathering; processing chamber; plasma monitoring; multiple step; monitoring assembly; obtained therethrough; monitoring plasma; address wavelength; above-noted aspects; step plasma; wafer operation; wafer production; wavelength shifts; aspect relates; optical emissions; inner surface; emissions data; plasma process; data obtained; plasma processing; various types; plasma recipe; aspect associated; discernible portion; optical emission; /427/118/204/356/700/702/

Citation Formats

Smith, Jr., Michael Lane, Stevenson, Joel O'Don, and Ward, Pamela Peardon Denise. Method and apparatus for monitoring plasma processing operations. United States: N. p., 2000. Web.
Smith, Jr., Michael Lane, Stevenson, Joel O'Don, & Ward, Pamela Peardon Denise. Method and apparatus for monitoring plasma processing operations. United States.
Smith, Jr., Michael Lane, Stevenson, Joel O'Don, and Ward, Pamela Peardon Denise. Sat . "Method and apparatus for monitoring plasma processing operations". United States. https://www.osti.gov/servlets/purl/873262.
@article{osti_873262,
title = {Method and apparatus for monitoring plasma processing operations},
author = {Smith, Jr., Michael Lane and Stevenson, Joel O'Don and Ward, Pamela Peardon Denise},
abstractNote = {The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Patent:

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