Epoxy bond and stop etch fabrication method

Patent · Fri Dec 31 23:00:00 EST 1999

OSTI ID:873192

Simmons, Jerry A ^[1]; Weckwerth, Mark V ^[2]; Baca, Wes E ^[3]

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1. Sandia Park, NM
2. Pleasanton, CA
3. Albuquerque, NM

A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

• Research Organization: SANDIA CORP
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 6110393
• OSTI ID: 873192
• Country of Publication: United States
• Language: English

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/216/204/438/
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