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Title: Chemical vapor deposition of fluorine-doped zinc oxide

Patent ·
OSTI ID:873024
 [1];  [2];  [3]
  1. Cambridge, MA
  2. Avon Lake, OH
  3. Santa Clara, CA
+ Show Author Affiliations

Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

DOE Contract Number:
XAN-4-13318-05
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
Patent Number(s):
US 6071561
Application Number:
09/242,093
OSTI ID:
873024
Country of Publication:
United States
Language:
English

References (3)

MOVPE Growth and optical characterization of high-quality ZnSe-ZnS superlattices using a novel zinc adduct precursor journal January 1994
Metalorganic chemical vapour deposition of oriented ZnO films journal May 1988
The use of dimethylzinc-amine adducts for the p-doping of InP and related alloys journal May 1993

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Related Subjects

chemical
vapor
deposition
fluorine-doped
zinc
oxide
fims
deposited
vaporized
precursor
compounds
comprising
chelate
dialkylzinc
amine
oxygen
source
fluorine
coatings
highly
electrically
conductive
transparent
visible
light
reflective
infrared
radiation
absorbing
ultraviolet
free
carbon
impurity
doped zinc
compounds comprising
zinc oxide
ultraviolet light
chemical vapor
electrically conductive
vapor deposition
visible light
infrared radiation
precursor compounds
precursor compound
highly electrically
fluorine-doped zinc
oxygen source
violet light
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