Chemical vapor deposition of fluorine-doped zinc oxide

Title: Chemical vapor deposition of fluorine-doped zinc oxide

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Abstract

Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

Inventors:

Gordon, Roy G ^[1]; Kramer, Keith ^[2]; Liang, Haifan ^[3]

Cambridge, MA
Avon Lake, OH
Santa Clara, CA

Publication Date:: 2000-01-01

OSTI Identifier:: 873024

Patent Number(s):: US 6071561

Application Number:: 09/242,093

Assignee:: President and Fellows of Harvard College (Cambridge, MA)

DOE Contract Number:: XAN-4-13318-05

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: chemical; vapor; deposition; fluorine-doped; zinc; oxide; fims; deposited; vaporized; precursor; compounds; comprising; chelate; dialkylzinc; amine; oxygen; source; fluorine; coatings; highly; electrically; conductive; transparent; visible; light; reflective; infrared; radiation; absorbing; ultraviolet; free; carbon; impurity; doped zinc; compounds comprising; zinc oxide; ultraviolet light; chemical vapor; electrically conductive; vapor deposition; visible light; infrared radiation; precursor compounds; precursor compound; highly electrically; fluorine-doped zinc; oxygen source; violet light; /427/

Citation Formats


                    Gordon, Roy G, Kramer, Keith, and Liang, Haifan. Chemical vapor deposition of fluorine-doped zinc oxide.  United States: N. p., 2000. 
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                    Gordon, Roy G, Kramer, Keith, & Liang, Haifan. Chemical vapor deposition of fluorine-doped zinc oxide.  United States.

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                    Gordon, Roy G, Kramer, Keith, and Liang, Haifan. Sat .  
        "Chemical vapor deposition of fluorine-doped zinc oxide".  United States.  https://www.osti.gov/servlets/purl/873024.

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@article{osti_873024,

  title        = {Chemical vapor deposition of fluorine-doped zinc oxide},

  author       = {Gordon, Roy G and Kramer, Keith and Liang, Haifan},

  abstractNote = {Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/873024},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2000},

  month        = {1}

}

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Chemical vapor deposition of fluorine-doped zinc oxide

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Films of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.
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