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Chemical vapor deposition of fluorine-doped zinc oxide

Patent ·
OSTI ID:873024
 [1];  [2];  [3]
  1. Cambridge, MA
  2. Avon Lake, OH
  3. Santa Clara, CA
+ Show Author Affiliations

Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

Assignee:
President and Fellows of Harvard College (Cambridge, MA)
Patent Number(s):
US 6071561
Application Number:
09/242,093
OSTI ID:
873024
Country of Publication:
United States
Language:
English

References (3)

The use of dimethylzinc-amine adducts for the p-doping of InP and related alloys journal May 1993
MOVPE Growth and optical characterization of high-quality ZnSe-ZnS superlattices using a novel zinc adduct precursor journal January 1994
Metalorganic chemical vapour deposition of oriented ZnO films journal May 1988

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Related Subjects

/427/
absorbing
amine
carbon
chelate
chemical
chemical vapor
coatings
compounds
compounds comprising
comprising
conductive
deposited
deposition
dialkylzinc
doped zinc
electrically
electrically conductive
fims
fluorine
fluorine-doped
fluorine-doped zinc
free
highly
highly electrically
impurity
infrared
infrared radiation
light
oxide
oxygen
oxygen source
precursor
precursor compound
precursor compounds
radiation
reflective
source
transparent
ultraviolet
ultraviolet light
vapor
vapor deposition
vaporized
violet light
visible
visible light
zinc
zinc oxide