skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

Abstract

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity siliconmore » to allow backside illumination while maintaining charge isolation in CCD pixels.« less

Inventors:
 [1]
  1. Hercules, CA
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
872857
Patent Number(s):
US 6025585
Application Number:
08/961868
Assignee:
Regents of University of California (Oakland, CA)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
low-resistivity; photon-transparent; window; attached; photo-sensitive; silicon; detector; comprises; combination; resistivity; electrically; conducting; layer; transparent; wavelength; photons; backside; photon-sensitive; wafer; chip; applied; photon; sensitive; devices; photodiodes; charge-coupled; active; pixel; sensors; low-energy; x-ray; radiation; detectors; photosensitive; illuminate; device; interference; circuit; printed; frontside; voltage; sufficient; deplete; high-resistivity; volume; charge; carriers; front; patterned; allows; photon-induced; created; reach; processed; circuitry; inventive; thinned; standard; fabrication; methods; achieve; charge-depletion; embodiment; allow; illumination; maintaining; isolation; ccd; pixels; silicon device; charge carrier; transparent window; charge-coupled device; fabrication method; charge carriers; coupled device; silicon layer; electrically conducting; radiation detector; radiation detectors; silicon wafer; silicon devices; sensitive silicon; charge created; charge-coupled devices; photon sensitive; silicon detector; fabrication methods; resistivity photon; wavelength photons; low-energy x-ray; /250/257/

Citation Formats

Holland, Stephen Edward. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector. United States: N. p., 2000. Web.
Holland, Stephen Edward. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector. United States.
Holland, Stephen Edward. Tue . "Low-resistivity photon-transparent window attached to photo-sensitive silicon detector". United States. https://www.osti.gov/servlets/purl/872857.
@article{osti_872857,
title = {Low-resistivity photon-transparent window attached to photo-sensitive silicon detector},
author = {Holland, Stephen Edward},
abstractNote = {The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.},
doi = {},
url = {https://www.osti.gov/biblio/872857}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {2}
}

Patent:

Save / Share: