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Method to adjust multilayer film stress induced deformation of optics

Patent ·
OSTI ID:872799
 [1];  [2]
  1. Sunol, CA
  2. Livermore, CA
+ Show Author Affiliations
A buffer-layer located between a substrate and a multilayer for counteracting stress in the multilayer. Depositing a buffer-layer having a stress of sufficient magnitude and opposite in sign reduces or cancels out deformation in the substrate due to the stress in the multilayer. By providing a buffer-layer between the substrate and the multilayer, a tunable, near-zero net stress results, and hence results in little or no deformation of the substrate, such as an optic for an extreme ultraviolet (EUV) lithography tool. Buffer-layers have been deposited, for example, between Mo/Si and Mo/Be multilayer films and their associated substrate reducing significantly the stress, wherein the magnitude of the stress is less than 100 MPa and respectively near-normal incidence (5.degree.) reflectance of over 60% is obtained at 13.4 nm and 11.4 nm. The present invention is applicable to crystalline and non-crystalline materials, and can be used at ambient temperatures.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of Unviersity of California (Oakland, CA)
Patent Number(s):
US 6011646
OSTI ID:
872799
Country of Publication:
United States
Language:
English

References (5)

Variation in stress with background pressure in sputtered Mo/Si multilayer films journal August 1995
Stress relaxation in Mo/Si multilayer structures journal June 1992
Multilayer sputter deposition stress control journal May 1996
Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing journal January 1996
Molybdenum/beryllium multilayer mirrors for normal incidence in the extreme ultraviolet journal January 1995

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