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Title: Time-of-flight SIMS/MSRI reflectron mass analyzer and method

Abstract

A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSRI) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle .theta., where .theta. is the angle between the horizontal axis of the mass analyzer and the undeflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, .theta. is less than or equal to about 120.degree. and, more preferably, equal to 74.degree.. For positive ion analysis, the extractor, lens, and front ring of the reflectron are set at negative high voltages (-HV). The back ring of the reflectron is set at greater than about +700V for MSRI measurements and between the range of about +15 V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. Clifton Park, NY
  2. Downers Grove, IL
  3. Naperville, IL
  4. Houston, TX
  5. Colorado Springs, CO
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
OSTI Identifier:
872787
Patent Number(s):
US 6008491
Application Number:
08/953,792
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
time-of-flight; sims; msri; reflectron; mass; analyzer; method; apparatus; analyzing; surface; characteristics; sample; secondary; spectroscopy; recoiled; provided; detecting; scattered; primary; energy; ejected; species; beam; analysis; techniques; comprising; positioning; tof; predetermined; angle; theta; horizontal; axis; undeflected; line; applying; specific; voltage; preferably; equal; 120; degree; 74; positive; extractor; lens; front; set; negative; voltages; -hv; 700v; measurements; range; 15; 50v; comprises; inverting; polarity; potentials; applied; obtain; data; analysis techniques; beam line; predetermined angle; mass spectroscopy; mass analyzer; surface characteristics; surface analysis; horizontal axis; analysis technique; sims measurements; /250/

Citation Formats

Smentkowski, Vincent S, Gruen, Dieter M, Krauss, Alan R, Schultz, J Albert, and Holecek, John C. Time-of-flight SIMS/MSRI reflectron mass analyzer and method. United States: N. p., 1999. Web.
Smentkowski, Vincent S, Gruen, Dieter M, Krauss, Alan R, Schultz, J Albert, & Holecek, John C. Time-of-flight SIMS/MSRI reflectron mass analyzer and method. United States.
Smentkowski, Vincent S, Gruen, Dieter M, Krauss, Alan R, Schultz, J Albert, and Holecek, John C. Tue . "Time-of-flight SIMS/MSRI reflectron mass analyzer and method". United States. https://www.osti.gov/servlets/purl/872787.
@article{osti_872787,
title = {Time-of-flight SIMS/MSRI reflectron mass analyzer and method},
author = {Smentkowski, Vincent S and Gruen, Dieter M and Krauss, Alan R and Schultz, J Albert and Holecek, John C},
abstractNote = {A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSRI) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle .theta., where .theta. is the angle between the horizontal axis of the mass analyzer and the undeflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, .theta. is less than or equal to about 120.degree. and, more preferably, equal to 74.degree.. For positive ion analysis, the extractor, lens, and front ring of the reflectron are set at negative high voltages (-HV). The back ring of the reflectron is set at greater than about +700V for MSRI measurements and between the range of about +15 V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.},
doi = {},
url = {https://www.osti.gov/biblio/872787}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {12}
}

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