Method for producing nanocrystalline multicomponent and multiphase materials
Patent
·
OSTI ID:871419
- Woodridge, IL
- Des Plaines, IL
- Westmont, IL
- Evanston, IL
A process for producing multi-component and multiphase nanophase materials is provided wherein a plurality of elements are vaporized in a controlled atmosphere, so as to facilitate thorough mixing, and then condensing and consolidating the elements. The invention also provides for a multicomponent and multiphase nanocrystalline material of specified elemental and phase composition having component grain sizes of between approximately 1 nm and 100 nm. This material is a single element in combination with a binary compound. In more specific embodiments, the single element in this material can be a transition metal element, a non-transition metal element, a semiconductor, or a semi-metal, and the binary compound in this material can be an intermetallic, an oxide, a nitride, a hydride, a chloride, or other compound.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL; Northwestern University
- Sponsoring Organization:
- United States Department of Energy
- DOE Contract Number:
- W-31109-ENG-38; FG02-86ER45229
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Number(s):
- US 5728195
- OSTI ID:
- 871419
- Country of Publication:
- United States
- Language:
- English
Synthesis of nanophase materials by electron beam evaporation
|
journal | July 1993 |
Synthesis and properties studies of nanocrystalline Al-Al3Zr
|
journal | October 1994 |
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Related Subjects
/75/264/
100
approximately
atmosphere
binary
chloride
combination
component
composition
compound
condensing
consolidating
controlled
controlled atmosphere
crystalline material
element
elemental
elements
embodiments
facilitate
grain
grain size
grain sizes
hydride
intermetallic
material
materials
metal
metal element
method
mixing
multi-component
multicomponent
multiphase
nanocrystalline
nanocrystalline material
nanophase
nanophase material
nanophase materials
nitride
nm
non-transition
oxide
phase
phase composition
phase material
plurality
process
producing
provided
provides
semi-metal
semiconductor
single
single element
sizes
specific
specific embodiment
specific embodiments
specified
thorough
thorough mixing
transition
transition metal
vaporized
100
approximately
atmosphere
binary
chloride
combination
component
composition
compound
condensing
consolidating
controlled
controlled atmosphere
crystalline material
element
elemental
elements
embodiments
facilitate
grain
grain size
grain sizes
hydride
intermetallic
material
materials
metal
metal element
method
mixing
multi-component
multicomponent
multiphase
nanocrystalline
nanocrystalline material
nanophase
nanophase material
nanophase materials
nitride
nm
non-transition
oxide
phase
phase composition
phase material
plurality
process
producing
provided
provides
semi-metal
semiconductor
single
single element
sizes
specific
specific embodiment
specific embodiments
specified
thorough
thorough mixing
transition
transition metal
vaporized