Ultrafast optical technique for the characterization of altered materials
Patent
·
OSTI ID:871314
- Barrington, RI
Disclosed herein is a method and a system for non-destructively examining a semiconductor sample (30) having at least one localized region underlying a surface (30a) through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in a polarization state of the reflected and/or transmitted light; (d) a change in the optical phase of the reflected and/or transmitted light; (e) a change in direction of the reflected and/or transmitted light; and (f) a change in optical path length between the sample's surface and a detector.
- Research Organization:
- Brown University
- DOE Contract Number:
- FG02-86ER45267
- Assignee:
- Brown University Research Foundation (Providence, RI)
- Patent Number(s):
- US 5706094
- OSTI ID:
- 871314
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/356/
30
30a
absence
accordance
altered
apparatus
application
arising
associates
beam
change
characterization
chemical
chemical specie
chemical species
concentration
conjunction
constants
continuous
continuous wave
damage
detector
diffused
direction
disclosed
due
effects
employed
energy
examining
following
implant
implant-related
implanted
induces
intensity
introduced
length
light
localized
localized region
location
materials
measured
measured response
measurement
measures
method
near
non-destructively
optical
optical constants
optical path
optical phase
optical probe
optical technique
path
path length
phase
polarization
presence
probe
probe beam
pulse
pulsed
pump
pump pulse
reflected
region
response
sample
selected
selected chemical
semiconductor
semiconductor sample
species
step
surface
technique
third
third step
time
time-dependent
time-varying
transient
transmitted
transmitted intensity
transmitted light
type
ultrafast
underlying
varying
wave
30
30a
absence
accordance
altered
apparatus
application
arising
associates
beam
change
characterization
chemical
chemical specie
chemical species
concentration
conjunction
constants
continuous
continuous wave
damage
detector
diffused
direction
disclosed
due
effects
employed
energy
examining
following
implant
implant-related
implanted
induces
intensity
introduced
length
light
localized
localized region
location
materials
measured
measured response
measurement
measures
method
near
non-destructively
optical
optical constants
optical path
optical phase
optical probe
optical technique
path
path length
phase
polarization
presence
probe
probe beam
pulse
pulsed
pump
pump pulse
reflected
region
response
sample
selected
selected chemical
semiconductor
semiconductor sample
species
step
surface
technique
third
third step
time
time-dependent
time-varying
transient
transmitted
transmitted intensity
transmitted light
type
ultrafast
underlying
varying
wave