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Sol-gel type synthesis of Bi.sub.2 (Sr,Ta.sub.2)O.sub.9 using an acetate based system

Patent ·
OSTI ID:871211
 [1]
  1. Albuquerque, NM
+ Show Author Affiliations

A method of forming a layered-perovskite bismuth-strontium-tantalum oxide (SBT) ferroelectric material is performed by dissolving a bismuth compound in a first solvent to form a first solution, mixing a strontium compound and a tantalum compound to form a binary mixture, dissolving the binary mixture in a second solvent to form a second solution, mixing the first solution with the second solution to form a SBT precursor solution, evaporating the first and second solvents to form a SBT precursor material and subsequently sintering said SBT precursor material in the presence of oxygen.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Alburquerque, NM)
Patent Number(s):
US 5683614
OSTI ID:
871211
Country of Publication:
United States
Language:
English

References (8)

Solution Deposition of Ferroelectric Thin Films journal June 1996
Plzt thin films prepared from acetate precursors journal April 1991
Characteristics of Bismuth Layered S r B i 2 T a 2 O 9 Thin-Film Capacitors and Comparison with P b ( Z r , T i ) O 3 journal September 1995
Characteristics of spin-on ferroelectric SrBi 2 Ta 2 O 9 thin film capacitors for ferroelectric random access memory applications journal May 1996
Fatigue-free ferroelectric capacitors with platinum electrodes journal April 1995
Preparation of Pb(Zr,Ti)O 3 thin films by sol gel processing: Electrical, optical, and electro‐optic properties journal September 1988
Sol-gel and MOD processing of layered perovskite and SrTiO3 films journal December 1995
Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds journal September 1995

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Related Subjects

/252/427/501/999/
acetate
based
binary
binary mixture
bismuth
bismuth-strontium-tantalum
compound
dissolving
evaporating
ferroelectric
ferroelectric material
form
forming
layered-perovskite
material
method
mixing
mixture
oxide
oxygen
performed
precursor
precursor material
precursor solution
presence
sbt
sintering
sol-gel
solution
solvent
solvents
sr
strontium
subsequently
synthesis
tantalum
tantalum compound
tantalum oxide
type